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| SMD Type 400V Dual N-Channel MOSFET KQS4901 IC IC Features 0.45 A, 400 V. RDS(ON) = 4.2 @ VGS = 10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous (TA=25 ) Drain Current Continuous (TA=70 ) Drain Current Pulsed (Note 1) Gate-Source Voltage Peak Diode Recovery dv/dt ( Note 2) Power Dissipation (TA=25 ) Power Dissipation (TA=70 ) Operating and Storage Temperature Thermal Resistance Junction to Ambient TJ, TSTG R JA Symbol VDSS ID IDM VGS dv/dt PD Rating 400 0.45 0.285 1.8 25 4.5 2 1.3 -55 to 150 62.5 Unit V A A A V V/ns W /W www.kexin.com.cn 1 SMD Type KQS4901 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Note: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2 ISD 0.45A,di/dt 200A/ S,VDD BVDSS,starting TJ=25 IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr VGS = 0 V, IS = 0.45 A VGS = 0 V, IS = 0.45 A (Not 3) diF/dt = 100 A/ s 86 0.15 VDS = 320 V, ID = 0.45 A,VGS=10V (Note 3,4) VDD = 200V, ID =0.45 A, RG = 25 (Note 3,4) VDS = 25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = 250 ID = 250 A Min 400 0.42 1 Typ IC IC Max Unit V V/ A A, Referenced to 25 VDS = 400 V, VGS = 0 V VDS = 320 V,Tc = 125 VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V VDS = VGS, ID = 250 A 2.0 3.2 0.283 160 30 5 5 20 20 35 5.8 0.53 3.22 10 100 -100 4.0 4.2 nA nA V m S 210 40 6.5 20 50 50 80 7.5 pF pF pF ns ns ns ns nC nC nC 0.45 1.8 1.5 A A V nS nC VGS = 10 V, ID =0.225 A VDS = 35 V, ID = 0.225A (Note 3) 3 Pulse Test :Pulse width 300 s,Duty cycle 2% 4 Essentially indepentdent of operating temperature 2 www.kexin.com.cn |
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